Print ISSN: 1812-125X

Online ISSN: 2664-2530

Keywords : ,،,؛Electrical properties


Study of Electrical Properties of Silver Nanoparticles on Porous Silicon

Mohammed ابراهیم alsaalihiu; Ghazwan Ghazi Al Nuaimi

JOURNAL OF EDUCATION AND SCIENCE, In Press
DOI: 10.33899/edusj.2021.129664.1147

In this paper, porous silicon has been prepared and studied by photochemical etching method using a n-type silicon wafer with electrical resistivity (0.01-0.02 Ω.cm), orientation (100), hydrofluoric acid of 20% HF, current density of 15 mA / cm2 and etching time at (5 min). Silver nanoparticles (AgNPs) have been deposited using laser ablation by drop casting with different laser energy of 400,600 and 800m J. The electrical properties (I-V measurements) of silver nanoparticles on porous silicon have studied in both light and dark conditions. It can be seen the samples behave a rectifier and the current density increases with increase laser energy due to increase in concentration of silver nanoparticles, which lead to a decrease in the values of resistivity as the laser energy increases, this is attributed to the pores are filled with silver nanoparticles and lead to interference between silver and the porous silicon layer. The silver nanoparticles play an important role in forming a homogeneous layer and enhancing the crystal stability of the porous silicon layer.

An Overview of the Evolution of the Porous Silicon material: A review

Ghazwan Ghazi Ali; Marwan Hafeedh Younus; Ivan Karomi

JOURNAL OF EDUCATION AND SCIENCE, 2021, Volume 30, Issue 2, Pages 42-52
DOI: 10.33899/edusj.2020.128341.1111

Recently, the properties and applications of the porous became the main subject of several books and the vast numbers of review articles. Porous silicon has demonstrated significant versatility and promise for a wide range of optoelectronic applications thanks to its large surface area and intense photoluminescence at room temperature. In this review, we describe the fabrication techniques and experimental improvements made towards porous silicon (PSi) and we provide a full picture of realization and characterization of this material. We also highlight its important properties, such as chemical, structure and surface properties. We summarize the techniques that have been used, including Fourier transform infrared spectroscopy, X-ray diffraction measurements, atomic force microscope images (AFM) and a scanning probe microscope (SEM). Additionally, the effect of the current density and etching time are also documented in this review. In summary, porous silicon has undergone vast improvement in both fabrication and characterization methods, which makes it an attractive modern material.