Abstract
Abstract This article presents the use of image processing technique to study the effect of injection current on the optical power distribution and laser spot cross-section (profile) of semiconductor laser type (AlGaInP). The arranged optical system specially designed to this purpose had taken the 2-dimension picture of the laser spot at various values of injection current range (0.7Ith-1.2Ith). The images were then analyzed and performed using the computer software package (Matlab Version, 7) in order to get the 3-dimension photograph of the laser spot. This spot will translate the power distribution with color grade. Furthermore we found that intensity of the central mode and FWHM at different values of injection current. By using this technique we can observ beam profile and optical power distribution for laser beam immediately from different angles (4). Including this research analysis of efficiency of laser beam usage on the base of geometrical consideration. It has shown that the losses of laser energy in some types of material processing technologies can reach as high as level of ( > 52% ).