Abstract
In the present work , the ( current- voltage ) characteristics have been studied for MOS type solar cell under the illumination. The cells have been fabrication from four types of silicon substrates with a nano oxide film. However, the effect of SiO2nano thickness on short – circuit current (Isc ) and open circuit voltage (Voc ) have been investigated for these solar cells. The results show that the thickness of SiO2has a significant effect on (Isc ) and (Voc ). The best (I-V) characteristics have been obtained from these cells which based on n- type silicon type polycrystalline with 2nm SiO2thickness. Moreover , the characteristics of (power – voltage ) for the same fabricated solar cells have been studied. The output power value that has been obtained is equal to (4.95 mW) which refers to solar cell based on same as above . Finally , the efficiency and fill factor for these type of solar cells have been estimated. It has been found that the highest values for efficiency and fill factor related to solar cell (silicon type polycrystalline n-type) equal to 7.01 and 0.429 respectively.
