الملخص

Abstract The electrical characteristics for Schottky barrier devices Au/n+-GaAs which have been radiated with two different doses of -ray at (3.41, 5.26)107 rad with -radiation and unradiated at range of different temperatures (93-333 K) are compared. It was found that the effect of temperature on I-V characteristics at forward bias for this devices are decreases as the radiation dose increase. Activation energy and barrier height measurement show that the conduction current are change from thermonic emission before radiation process to generation-recombination in lightly -radiated devices, while for highly radiated devices the conduction current is different to that. It was found a reduction in leakage current by using Schottky devices with guard ring structure which fabricated by photolithography technique, the electrical characteristics of this radiated devices show low effect to radiation and high stability.